Comparison of Capacitance-Voltage, Current-Voltage, and BEEM Measurements of Metal-Graphene-Semiconductor Schottky Barrier Heights

POSTER

Abstract

Capacitance-voltage, current-voltage, and ballistic electron emission microscopy (BEEM) measurements were performed to determine the Schottky Barrier Heights of Au/Si and Au/graphene/Si samples. In addition, measurements were performed on a commercial diode for reference. Data were acquired as a function of temperature, which indicate that the graphene had little effect upon the barrier heights that were measured.

Presenters

  • Hyeonseon Choi

    Colleges of Nanoscale Science and Engineering, SUNY Polytechnic Institute, Colleges of Nanoscale Science and Engineering, SUNY Polytechnic Institute, Albany, NY

Authors

  • Hyeonseon Choi

    Colleges of Nanoscale Science and Engineering, SUNY Polytechnic Institute, Colleges of Nanoscale Science and Engineering, SUNY Polytechnic Institute, Albany, NY

  • Jack Rogers

    Colleges of Nanoscale Science and Engineering, SUNY Polytechnic Institute, Colleges of Nanoscale Science and Engineering, SUNY Polytechnic Institute, Albany, NY

  • Steven Gassner

    Colleges of Nanoscale Science and Engineering, SUNY Polytechnic Institute, Colleges of Nanoscale Science and Engineering, SUNY Polytechnic Institute, Albany, NY

  • Westly Nolting

    Colleges of Nanoscale Science and Engineering, SUNY Polytechnic Institute, Colleges of Nanoscale Science and Engineering, SUNY Polytechnic Institute, Albany, NY

  • Vincent LaBella

    Colleges of Nanoscale Science and Engineering, SUNY Polytechnic Institute, Nanoscience, Colleges of Nanoscale Science and Engineering, SUNY Polytechnic Institute, Colleges of Nanoscale Science and Engineering, SUNY Polytechnic Institute, Albany, NY