Linear magnetoresistance in the all-in-all-out antiferromagnet Cd2Os2O7

ORAL

Abstract

The pyrochlore Cd2Os2O7 undergoes a metal-insulator transition at 227 K, concomitant with a formation of all-in-all-out magnetic ordering. Here, we explore the magnetoresistance associated with this magnetic order, which manifests an odd-parity linear functional form. This form, recently reported in the related compounds Eu2Ir2O7, is allowed by the Onsager relationship for antiferromagnetic materials; however the microscopic origin is still unclear. By systematically studying a range of galvanomagnetic measurement configurations, we are able offer potential mechanisms for understanding this linear magnetoresistance involving transport both in the bulk and along the magnetic domain walls.

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Presenters

  • Yishu Wang

    Johns Hopkins University, Caltech, Physics, Math & Astronomy, The Johns Hopkins University

Authors

  • Yishu Wang

    Johns Hopkins University, Caltech, Physics, Math & Astronomy, The Johns Hopkins University

  • Yejun Feng

    Okinawa Institute of Science and Technology, Okinawa Institute of Science and Technology Graduate University

  • Felipe Gomez

    California Institute of Technology

  • Daniel Silevitch

    Caltech, Caltech, Physics, Math & Astronomy, California Institute of Technology

  • Jiaqiang Yan

    Oak Ridge National Laboratory (USA), Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge National Laboratory, Materials Science and Technology, Materials Science and Technology, Oak Ridge National Lab, Materials Science and Engineering, The University of Tennessee

  • David George Mandrus

    Department of Materials Science and Engineering, University of Tennessee, Knoxville, Tennessee 37996, USA, University of Tennessee-Knoxville, Oak Ridge National Lab, Department of Materials Science and Engineering, University of Tennessee, University of Tennessee (Knoxville, USA), Department of Materials Science and Engineering, University of Tennessee Knoxville, Department of Material Science & Engineering, University of Tennessee, Material Science and Engineering, University of Tennessee, Materials Science and Technology, Materials Science and Technology, University of Tennessee, Knoxville, Department of Materials Science and Engineering, The University of Tennessee, Materials Science and Engineering, The University of Tennessee, Oak Ridge National Laboratory, Department of Material Science and Engineering, University of Tennessee

  • Patrick Lee

    Massachusetts Institute of Technology, Physics, Massachusetts Institute of Technology, Department of Physics, Massachusetts Institute of Technology

  • Thomas F Rosenbaum

    Caltech, Caltech, Physics, Math & Astronomy, California Institute of Technology