Nano-imaging of local strain in hexagonal boron nitride

ORAL

Abstract

Strain plays an important role in condensed matter physics. Strain effect becomes more interesting in two-dimensional materials, both because an unusually large strain can be achieved without breaking the material, and because the strain can lead to novel behavior such as the generation of pseudomagnetic field in graphene. Here, we report an ultra-sensitive nanometer scale mapping and a quantitative analysis of local strain field in atomically thin hexagonal boron nitride.

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Presenters

  • Bosai Lv

    Physics, Shanghai Jiaotong University, Shanghai Jiao Tong University

Authors

  • Bosai Lv

    Physics, Shanghai Jiaotong University, Shanghai Jiao Tong University

  • Hongyuan Li

    Physics, Shanghai Jiaotong University, Shanghai Jiao Tong University

  • Lili Jiang

    Physics, UC Berkeley, UC Berkeley

  • Wanfei Shan

    Shanghai Jiao Tong University

  • Hans Bechtel

    Advanced Light Source Division, Lawrence Berkeley National Laboratory, Lawrence Berkeley National Laboratory

  • Michael Crocker Martin

    Lawrence Berkeley National Laboratory

  • Weidong Luo

    Shanghai Jiao Tong University, Department of Physics and Astronomy, Shanghai Jiao Tong University

  • Feng Wang

    University of California - Berkeley, University of California, Berkeley, Physics, UC Berkeley, Department of Physics, University of California at Berkeley, Berkeley, CA 94709, USA, University of California at Berkeley, Lawrence Berkeley National Laboratory and UC Berkeley, UC Berkeley, Physics, University of California, Berkeley

  • Zhiwen Shi

    Physics, Shanghai Jiaotong University, Shanghai Jiao Tong University