EDSR of a single heavy hole in a lateral GaAs/AlGaAs quantum dot qubit

Single holes are attractive as spin qubits due to their advantageous properties which include a reduced hyperfine interaction, a strong spin-orbit coupling for sub-nanosecond spin rotations, and the absence of valley complications.
Here we report single hole electric dipole spin resonance (EDSR) measurements over the 20-50 GHz range taking advantage of the strong spin-orbit coupling. The experiment was performed in a GaAs double quantum dot device described in [1] tuned in such way that only one of the dots contained a single heavy hole with the Fermi level of the adjacent lead positioned in between Zeeman split spin states. In this situation one hole is initialized in the lowest spin level and the current is blocked. A small microwave voltage is applied to a plunger gate to mediate EDSR rotating the hole spin from the lower to the upper spin level allowing the hole to tunnel to the lead. The spin resonance is detected as an increase in current when the resonant condition is fulfilled. The second dot is used as an auxiliary tool to tune the g-factor via a strong spin-dependent tunnel coupling[1]. We show that g-factor can be tuned in the range of 30% by a small change of the voltage applied to the auxiliary dot plunger gate.
[1] A. Bogan et al., Phys. Rev. Lett. 120, 207701 (2018).