Stacking-dependent magnetism in bilayer CrI3

ORAL

Abstract

We report the connection between the stacking order and magnetic properties of bilayer CrI3 using first-principles calculations. We show that the stacking order defines the magnetic ground state. By changing the interlayer stacking order one can tune the interlayer magnetism between antiferromagnetism and ferromagnetism. To measure the predicted stacking-dependent magnetism, we propose using a linear magnetoelectric effect. Our results not only gives a possible explanation for the observed antiferromagnetism in bilayer CrI3 but also have direct implications in heterostructures made of two-dimensional magnets.

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Presenters

  • Nikhil Sivadas

    Applied and Engineering Physics, Cornell University, Cornell University

Authors

  • Nikhil Sivadas

    Applied and Engineering Physics, Cornell University, Cornell University

  • Satoshi Okamoto

    Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge National Laboratory, Materials Sciences and Technology Division, Oak Ridge National Laboratory, Oak Ridge National Lab

  • Xiaodong Xu

    University of Washington, Department of Physics, University of Washington, University of Washington, Seattle

  • Craig J Fennie

    Cornell University

  • Di Xiao

    Department of Physics, Carnegie Mellon University, Pittsburgh, Pennsylvania 15213, USA, Carnegie Mellon University, Carnegie Mellon Univ, Department of Physics, Carnegie Mellon University