Tuning the opto electronic properties of ultrasmooth large area rGO films grown via Pulsed laser deposition (PLD) technique

We present the growth of large area ultra-smooth reduced graphene oxide (rGO) thin films on a four inch wafer via beam scanning mode of Pulsed laser deposition technique. With the versatility of the PLD technique, the easy tuning of optoelectronic properties is achieved on rGO thin films without employing any buffer layers. The conventional growth mechanism of rGO films involves hazardous chemicals, whereas this physical vapour deposition technique gives high quality rGO films with tunable optoelectronic properties. This wafer-scale growth mechanism of rGO thin films can potentially employ in various optoelectronic applications due to its high transparency and p-type conductivity. We illustrates the optoelectronic tunability of large area rGO films and its use through the evaluation of transparent conducting films, where our rGO films shows highest performance as compared to existing p -type transparent conducting films.