A Study of Vertical Transport in Silicon-Graphene Junction

ORAL

Abstract

In this report, we explore the important roles of single layer graphene in the vertical tunneling process as a tunneling barrier. Although being a semimetal in the lateral lattice plane, the graphene together with the vdW gap acts as a tunneling barrier, that is nearly transparent to vertically tunneling electrons, due to its atomic thickness and the transverse momenta mismatch between the injected electrons and the graphene band structure. This is accentuated using electron tunneling spectroscopy (ETS) showing a lack of features corresponding to the Dirac cone band structure. Meanwhile, the graphene acts as a lateral conductor through which the potential and charge distribution across the tunneling barrier can be tuned. These unique properties make graphene an excellent 2D atomic grid, transparent to charge carriers, and yet offer the control of the carrier flux via the electrical potential.

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Presenters

  • Shin-Hung Tsai

    University of California, Los Angeles

Authors

  • Sidong Lei

    University of California, Los Angeles

  • Xiaodan Zhu

    University of California, Los Angeles

  • Shin-Hung Tsai

    University of California, Los Angeles

  • Xiang Zhang

    Rice University

  • Gen Yin

    University of California, Los Angeles

  • carlos torres

    University of California, Los Angeles

  • Aryan Navabi

    University of California, Los Angeles

  • Zehua Jin

    Rice University

  • Hussam Qasem

    University of California, Los Angeles

  • Robert Vajtai

    Department of Materials Science and Nano Engineering, Rice University, Houston, TX, USA, Department of Materials Science and Nano Engineering, Rice University, Houston, TX-77005, USA., Rice University, Department of Materials Science and Nano Engineering, Rice University

  • Roger Lake

    Electrical and Computer Engineering, University of California, Riverside, University of California, Riverside, Department of Electrical and Computer Engineering, University of California, Riverside

  • Pulickel M Ajayan

    Department of Materials Science and Nano Engineering, Rice University, Houston, TX, USA, Department of Materials Science and Nano Engineering, Rice University, Houston, TX-77005, USA., Rice University, Materials Science & NanoEngineering, Rice University, Department of Materials Science and Nano Engineering, Rice University

  • Kang Wang

    University of California, Los Angeles, Electrical and Computer Engineering, University of California, Los Angeles, Department of Electrical Engineering, University of California, Los Angeles