Quasi-particle Interference on the Step Edges of Epitaxial Stanene on InSb (111)

Stanene (single-layer of tin), having an atomic structure similar to graphene, offers a promising platform for achieving room-temperature quantum spin Hall effect with a gap of 0.3 eV [1-3]. We have performed the in-situ scanning tunneling microscopy experiments on stanene which was epitaxially grown on the InSb (111). Several types of step edges have been observed in the atomic-resolution STM topographic image. The quasi-particle interference near the steps has been detected by STS, allowing us to study the electron scattering behavior along the edge in relation to the topological property of the edge state.

Reference:
[1] Y. Xu, et al, Phys. Rev. Lett. 111, 1 (2013).
[2] F. F. Zhu, et al, Nat. Mater. 14, 1020 (2015).
[3] C. Z. Xu et al, Phys. Rev. Lett. 118, 1 (2017).