Evidence of Metal-Insulator Transition in 2D Van der Waals layers of Copper Indium Selenide (CuIn7Se11)

ORAL

Abstract

Several recent reports have indicated the possibility of metal-insulator transition (MIT) in two-dimensional electron systems (2DES), which also includes atomically thick van der Waals layers of two-dimensional (2D) materials such as MoS2, MoSe2, ReS2 etc. In general it appears that alteration of external control parameters such as pressure, charge carrier density etc. can give rise to such phenomenon in these materials. In this regard, this study will demonstrate the possibility of MIT in 2D van der Waals layers of Copper Indium Selenide (CuIn7Se11). A study of conductivity (σ) of 2D CuIn7Se11 FET devices (fabricated using flakes exfoliated from crystals grown using chemical vapor transport technique) as a function of temperature (T) and charge carrier density (n2D) (modulated via electrostatic doping through SiO2 gate) show strong features of MIT. The observed phenomenon will be discussed in light of existing theoretical models.

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Presenters

  • Saikat Talapatra

    Department of Physics, Southern Illinois University Carbondale, Carbondale, IL, USA, Department of Physics, Southern Illinois University Carbondale, IL-62901, USA., Southern Illinois University Carbondale, Physics, Southern Illinois University Carbondale, Department of Physics, Southern Illinois University Carbondale

Authors

  • Prasanna Dnyaneshwar Patil

    Department of Physics, Southern Illinois University Carbondale, Carbondale, IL, USA, Department of Physics, Southern Illinois University Carbondale, IL-62901, USA., Physics, Southern Illinois University Carbondale, Department of Physics, Southern Illinois University Carbondale

  • Sujoy Ghosh

    Department of Physics, Southern Illinois University Carbondale, Carbondale, IL, USA, Department of Physics, Southern Illinois University Carbondale, IL-62901, USA.

  • Milinda Wasala

    Department of Physics, Southern Illinois University Carbondale, Carbondale, IL, USA, Department of Physics, Southern Illinois University Carbondale, IL-62901, USA., Southern Illinois University Carbondale, Physics, Southern Illinois University Carbondale, Department of Physics, Southern Illinois University Carbondale

  • Sidong Lei

    Department of Materials Science and Nano Engineering, Rice University, Houston, TX, USA, Department of Materials Science and Nano Engineering, Rice University, Houston, TX-77005, USA., Department of Materials Science and Nano Engineering, Rice University

  • Robert Vajtai

    Department of Materials Science and Nano Engineering, Rice University, Houston, TX, USA, Department of Materials Science and Nano Engineering, Rice University, Houston, TX-77005, USA., Rice University, Department of Materials Science and Nano Engineering, Rice University

  • Pulickel M Ajayan

    Department of Materials Science and Nano Engineering, Rice University, Houston, TX, USA, Department of Materials Science and Nano Engineering, Rice University, Houston, TX-77005, USA., Rice University, Materials Science & NanoEngineering, Rice University, Department of Materials Science and Nano Engineering, Rice University

  • Saikat Talapatra

    Department of Physics, Southern Illinois University Carbondale, Carbondale, IL, USA, Department of Physics, Southern Illinois University Carbondale, IL-62901, USA., Southern Illinois University Carbondale, Physics, Southern Illinois University Carbondale, Department of Physics, Southern Illinois University Carbondale