Electronic structure of 3d transition-matal dichalcogenide thin films grown by molecular-beam epitaxy

ORAL

Abstract

There has been increasing interest in atomically-thin transition-metal dichalcogenides (TMDs) hosting intriguing properties absent in their bulk form. For example, in 4d and 5d transition-metal TMDs such as MoS2, WSe2, and NbSe2, valley degree of freedom plays an important role on novel two-dimensional properties. 3d TMDs, on the other hand, are expected to exhibit more varieties of phenomena involving excitonic physics, charge density wave, and magnetism, due to stronger electron-electron, electron-lattice and exchange interactions. Recently, emergent ferromagnetism in monolayer VSe2 was reported, although the situation is still controversial. To unambiguously characterize physical properties of atomically thin TMDs and further understand the origin of the emergent two-dimensional phenomena, the direct observation of electronic structures is crucial. We have fabricated atomically thin films of 3d TMDs by molecular-beam epitaxy with our growth recipe [1] and clarified electronic structures by angle-resolved photoemission spectroscopy (ARPES). In this presentation, we will discuss the physical properties appearing in two-dimensional 3d TMDs by comparison with the ARPES results and band calculations. [1] M. Nakano, et al., Nano Lett. 17, 5595 (2017).

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Presenters

  • Satoshi Yoshida

    Department of Applied Physics, The University of Tokyo

Authors

  • Satoshi Yoshida

    Department of Applied Physics, The University of Tokyo

  • Masaki Nakano

    Department of Applied Physics, The University of Tokyo, University of Tokyo

  • Hideki Matsuoka

    Department of Applied Physics, The University of Tokyo, University of Tokyo

  • Yuki Majima

    Department of Applied Physics, The University of Tokyo

  • Yue Wang

    Department of Applied Physics, The University of Tokyo

  • Yuta Ohigashi

    Department of Applied Physics, The University of Tokyo

  • Masato Sakano

    The University of Tokyo, Department of Applied Physics, The University of Tokyo

  • Yoshihiro Iwasa

    Department of Applied Physics, The University of Tokyo, University of Tokyo, Department of applied physics, University of Tokyo, Department of Applied Physics, University of Tokyo, Quantum-Phase Electronics Center and Department of Applied Physics, University of Tokyo

  • Kyoko Ishizaka

    The University of Tokyo, Department of Applied Physics, The University of Tokyo