Growth and Transport Characterization of Epitaxial Graphene on Non-polar SiC Facets

The ballistic transport and quantized conductance of e²/h observed in epitaxial graphene side wall nanoribbons at room temperature still lacks full explanation [1]. In an effort to solve this question, we produced graphene samples on specific SiC facets that host the side wall nanoribbons and fabricated standard transport measurement devices. Pre-growth patterning has been demonstrated to direct the graphene growth and improve growth uniformity. We did a variety of measurements, including AFM, Raman spectroscopy, ARPES, STS and transport measurements. These results indicate a charge-neutral graphene material, showing properties consistent with the observation of ballistic transport in side wall nanoribbons.
[1] J. Baringhaus et al. Nature 506, 349 (2014).