High Pressure Behavior of Ternary H-C-S Compounds: Structural and Electronic Properties

Efforts to identify and develop room temperature superconducting materials are an intensive area of research, motivated by both fundamental science and the prospect for applications. We present pressure-induced structural and electronic properties of ternary H-C-S compounds to 150 GPa, using a diamond anvil cell, micro-confocal Raman spectroscopy, infrared absorption, and electrical resistance measurements. The results indicate that the H-C-S compound undergoes two structural phase transitions and an insulator-metal transition above 55 GPa. The temperature dependent resistance changes further show a gradual electronic transition from an insulator to a metal, which is driven by the pressure induced band gap closing. Also, we will discuss further investigation of these compounds as potential superconductors with high transition temperatures.