Coupling of single photon emitters in hBN to microcavities

ORAL

Abstract

Hexagonal Boron Nitride (hBN) was recently found to be a source of single photon emitters (SPE) which exhibit desirable properties such as narrow room-temperature linewidths, spectral tunability and operation under ambient conditions. Despite these advantageous properties, scalable integration of these emitters into chip-based cavities has proven elusive. Here, we demonstrate coupling of hBN defect emission to Si3N4 microdisk cavities by exploiting the topography of the cavity structure to engineer strain and thereby activate SPEs which near field couple to the cavities. We find the cavity coupled emission to have a Purcell enhancement of 1.3, close to the cavity’s theoretical Purcell factor of 1.6. The present work is a first step towards cavity enhanced SPEs in this material system and paves the way for deterministic cavity coupling of SPEs that operate at room temperature.

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Presenters

  • Nicholas Proscia

    Physics, City College of New York

Authors

  • Nicholas Proscia

    Physics, City College of New York

  • Harishankar Jayakumar

    Department of Physics and Astronomy, University of Calgary, City College of New York, Physics, City College of New York

  • Zav Shotan

    Physics, City College of New York

  • Gabriel Lopez-Morales

    Physics, City College of New York

  • Xiaochen Ge

    University of Texas, Arlington

  • Weidong Zhou

    University of Texas, Arlington

  • Carlos A. Meriles

    Physics, CUNY, City College of New York, Physics, City College of New York

  • Vinod M Menon

    PHYSICS, City College of New York, City University of New York, New York 10031, USA, Department of Physics, City College of New York, 160 Convent Ave., New York, NY 10031, USA, City College of New York, CUNY, Physics, City College of New York,New York, NY 10031, Physics, City College of New York, City University of New York, Department of Physics, City College of New York, New York- 10031,USA.