Electrical Characterization of Ge2Sb2Te5 Phase Change Memory Cells at Cryogenic Temperatures to Investigate the Physical Phenomena that Give Rise to Resistance Drift of the Amorphous Phase

ORAL

Abstract

Electrical measurements of metastable amorphous Ge2Sb2Te5 in the temperature range of 300 - 675 K using a waveform tailored to melt, quench and characterize cells in a single shot [1] have resulted in characterization of temperature dependent carrier activation energies that follow a parabolic behavior with a peak value of ∼377 meV at ∼465 K [2]. Measurements of cells amorphized at cryogenic temperatures give insights about the physical phenomena that give rise to resistance drift of the amorphous phase as well as the activation energy in a broader temperature range. We have performed electrical measurements in 85 – 300 K temperature range and observed resistance drift over time. As the viscosity of the material is expected to be extremely high at 85 K, we expect charge trapping to be the dominant factor for drift in amorphous Ge2Sb2Te5.

References:
[1] F. Dirisaglik et al., Nanoscale 7, 16625 (2015).
[2] Sadid Muneer et al., AIP Advances 8, 065314 (2018).

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Presenters

  • ABM Hasan Talukder

    University of Connecticut

Authors

  • ABM Hasan Talukder

    University of Connecticut

  • Raihan Sayeed Khan

    Electrical and Computer Engineering, University of Connecticut, Storrs, CT 06269, USA, University of Connecticut

  • Sadid Muneer

    Electrical and Computer Engineering, University of Connecticut, Storrs, CT 06269, USA, University of Connecticut

  • Kimberly Nguyen

    University of Connecticut

  • Madison Nadolny

    University of Connecticut

  • Ali Gokirmak

    Electrical and Computer Engineering, University of Connecticut, Storrs, CT 06269, USA, University of Connecticut, ECE, UConn, Electrical and Computer Engineering, University of Connecticut

  • Helena Silva

    Electrical and Computer Engineering, University of Connecticut, Storrs, CT 06269, USA, University of Connecticut, ECE, UConn