Characteristics and applications of carbon-based ReRAM

In this work, we anticipate the performance of fullerene molecules could provide a new prototype of the Carbon-based ReRAM model owing to its outstanding electric and magnetic characteristic. Few layers of fullerene molecules (C₈₄) ultrathin film were assembled thermally on Si (111)-7×7 substrates under ultra-high vacuum. The top-electrode Pt (50nm) was deposited by RF magnetron sputtering on C₈₄ film. The surface electronic states and magnetic characteristics of C₈₄ film were studied by UHV-STM and MFM. The STS has revealed the wide band gap of fullerene molecule in which the LDOS can be tuned by different cover density and different combination of fullerene molecules. The ferromagnetic domain has been discovered along the domain boundaries on proposed Si substrate due to the quantum confinement along with localized unpaired electrons in fullerene molecules. The resistance switching behavior of the memory devices were attributed to the formation and rupture of conductive filaments. Thus, we characterized the binding feature and the photoelectric properties with Raman, XPS and VT-PL. We could declare fullerene molecules have potential as a promising candidate for next generation nonvolatile memory and other semiconductor applications.