Finite Element Modeling of Ovonic Switching

ORAL

Abstract

Ovonic switching in amorphous semiconductors was first reported in the 1960s [1] and has since spawned phase change memory, ovonic threshold switches, and a rich debate on the physical phenomena underlying the rapid transition from low to high electrical conductivity in these materials once a sufficient field is applied [2]. We model ovonic switching as a field-assisted thermal phenomenon in 2-D, 2-D rotational, and 3-D finite element simulations. We vary fields, geometries, and transient conditions and obtain I-V characteristics in good agreement with experimental data. We also show 2-D simulations of ovonic switches as current-limiting access devices for reset and set of phase change memory cells in a crossbar array using our finite element phase change model [3], [4].

[1] S. R. Ovshinsky, Phys. Rev. Lett., 21, 20, pp. 1450–1453, Nov. (1968) DOI: 10.1103/PhysRevLett.21.1450.
[2] M. Wimmer and M. Salinga, New J. Phys., 16, (2014) DOI: 10.1088/1367-2630/16/11/113044.
[3] Z. Woods and A. Gokirmak, IEEE Trans. Electron Devices, 64, 11, pp. 4466–4471, Nov. (2017) DOI: 10.1109/TED.2017.2745506.
[4] Z. Woods et al., IEEE Trans. Electron Devices, 64, 11, pp. 4472–4478, Nov. (2017) DOI: 10.1109/TED.2017.2745500.

–

Presenters

  • Jake Scoggin

    University of Connecticut, ECE, UConn, Electrical and Computer Engineering, University of Connecticut

Authors

  • Jake Scoggin

    University of Connecticut, ECE, UConn, Electrical and Computer Engineering, University of Connecticut

  • Helena Silva

    Electrical and Computer Engineering, University of Connecticut, Storrs, CT 06269, USA, University of Connecticut, ECE, UConn

  • Ali Gokirmak

    Electrical and Computer Engineering, University of Connecticut, Storrs, CT 06269, USA, University of Connecticut, ECE, UConn, Electrical and Computer Engineering, University of Connecticut