Enhanced Reset Variability in Phase Change Memory for Hardware Security Applications

ORAL

Abstract

Phase change memory (PCM) relies on the change of resistance of a chalcogenide material, that can be reversibly switched between amorphous and crystalline states by applying appropriate electrical pulses. We have experimentally shown enhanced variability during the amorphization hexagonal close packed (hcp) Ge2Sb2Te5 line cells by using long-narrow cell dimensions and voltage pulses with narrow rise and fall times. Percolation-blocked conduction in long-narrow cells, parasitic capacitive current, and thermal runaway at the onset of melting from the initial hcp state are the possible physical mechanisms behind the significant increase of reset uncertainty, which is useful for implementing hardware security primitives1–4.

1R. S. Khan et al., in Security Opportunities in Nano Devices and Emerging Technologies (CRC Press, 2017), p. 93-114.
2N. Noor et al., in International Semiconductor Device Research Symposium (2016).
3N. Noor et al., in Mater. Res. Soc. Fall Meet. (2017).
4N. Noor et al., in Mater. Res. Soc. Spring Meet. (2018).

–

Presenters

  • Helena Silva

    Electrical and Computer Engineering, University of Connecticut, Storrs, CT 06269, USA, University of Connecticut, ECE, UConn

Authors

  • Nafisa Noor

    University of Connecticut, Electrical and Computer Engineering, University of Connecticut, Storrs, CT 06269, USA

  • Sadid Muneer

    Electrical and Computer Engineering, University of Connecticut, Storrs, CT 06269, USA, University of Connecticut

  • Raihan Sayeed Khan

    Electrical and Computer Engineering, University of Connecticut, Storrs, CT 06269, USA, University of Connecticut

  • Ali Gokirmak

    Electrical and Computer Engineering, University of Connecticut, Storrs, CT 06269, USA, University of Connecticut, ECE, UConn, Electrical and Computer Engineering, University of Connecticut

  • Helena Silva

    Electrical and Computer Engineering, University of Connecticut, Storrs, CT 06269, USA, University of Connecticut, ECE, UConn