Implementation and Simulation of Electrostatically Controlled Quantum Dots in CMOS Technology

A new architecture of a charge qbit suitable for implementation in large scale CMOS circuits is presented. We demonstrate techniques for time-independent / time-dependent simulations of quantum states and transport in such quantum dots. The time-independent technique makes use of a semi-analytical approach in the Schrodinger formalism combining the calculations of the electric field in CMOS structures with a piece-wise potential approximation of eight or more potential wells. The time-dependent technique leverages the semi-analytical approach to obtain the evolution of eigen states in explicit form. The techniques are upgraded to calculations based on the density matrix. This approach allows estimations of transition frequencies, leakage of the wavefunction between quantum states, and de-coherence due to finite potentials and asymmetries of CMOS structures. Based on the height of the barrier between the wells, the behavior can be interpreted as semi-classical single electron transport, CNOT quantum gate operation, or quantum annealing. The presented approach allows the design of quantum gates compatible with conventional CMOS technologies and operating at 4K. The structure was standard foundry solution. We describe the implementation including integrated control structure