Ultra-thin body buried oxide 28nm FD-SOI platform for silicon quantum dots

Silicon spin qubits, with their long coherence time and their compatibility with CMOS industrial technology shows great promise for large scale quantum computing and co-integration. Here we present a UTBB FD-SOI platform that is designed to operate as a transistor and host quantum dots. This platform is composed of NMOS structures with wire gate and split enhancement gate geometries, and is entirely fabricated inside STMicroelectronics’ standard process line. We explore various regimes in gate voltage space and demonstrate reproducible operation of multiples devices at 1.5 K and 10m K. We identify various regime for formation of quantum dots including electrostatic single and double quantum dots. We also present a cryogenic characterizsation of classical FD-SOI transistors that involves variation of mobility, kink effect and split C-V analysis down to 10 mK. These results set a pathway towards improved FD-SOI devices and quantum dots fully fabricated in standard process line.