Electrically switching the valley polarization of 2D semiconductor

ORAL

Abstract

Controlling the valley degree of freedom in transition metal dichalcogenide(TMD) semiconductors is essential to the application of valleytronic devices. The strong magnetic coupling between monolayer TMD semiconductor WSe2 and few layer CrI3, a recently discovered 2D magnet, provides a novel approach for lifting the valley degeneracy and switching the valley polarization. In this talk we present our result on gate controlled valley polarization in CrI3/WSe2 heterostructures. Due to the short-range magnetic proximity interaction, WSe2 shows clear valley polarization controlled by the spin orientation of CrI3. We demonstrate that the magnetic coupling between WSe2 and CrI3 could be effectively tuned by gate voltage, allowing reversible and efficient electrical switching of the valley polarization in WSe2.

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Presenters

  • Lizhong Li

    Cornell University, Applied and Engineering Physics, Cornell University

Authors

  • Lizhong Li

    Cornell University, Applied and Engineering Physics, Cornell University

  • Shengwei Jiang

    Cornell University, Applied and Engineering Physics, Cornell University

  • Zefang Wang

    Department of Physics, Penn State University, Penn State University & Cornell University, Cornell University/Pennsylvania State University

  • Jie Shan

    Cornell University, Applied and Engineering Physics, Cornell University, Applied and engineering physics, Cornell University

  • Kin Fai Mak

    Cornell University, Applied and Engineering Physics, Cornell University, Physics, Cornell University