Modeling realistic grain boundaries in CdTe

ORAL

Abstract

Grain boundaries (GBs) are performance-limiting in CdTe photovoltaics. Towards understanding and improving GBs, especially in the presence of impurities or alloying elements such as Se and Cl, it is important to perform first principles density functional theory (DFT) modeling on realistic structural models. We develop and use a code FANTASTX (Fully Automated Nanoscale To Atomistic Structure from Theory and eXperiment) which aims at creating atomistic structures which are consistent with scanning transmission electron microscopy (STEM) images as well as are energetically reasonable. We will discuss the electronic structures of realistic CdTe GBs, the effects of impurities on the electronic structure, and the implications for photovoltaic performance.

–

Presenters

  • Eric Schwenker

    Argonne National Laboratory

Authors

  • Eric Schwenker

    Argonne National Laboratory

  • Arun Kumar Mannodi Kanakkithodi

    Argonne National Laboratory, Center for Nanoscale Materials, Argonne National Laboratory

  • Fatih Sen

    Argonne National Laboratory

  • Li An Chen

    Argonne National Laboratory

  • Spencer Hills

    Argonne National Laboratory

  • Jinglong Guo

    Physics, University of Illinois at Chicago

  • Moon Kim

    University of Texas at Dallas, Materials Science and Engineering, University of Texas at Dallas, Materials Science, UT Dallas

  • Robert Klie

    Univ of Illinois - Chicago, Physics, University of Illinois at Chicago, University of Illinois at Chicago, Physics, Univeristy of Illinois at Chicago

  • Maria Chan

    Argonne National Lab, Argonne National Laboratory, Center for Nanoscale Materials, Argonne National Laboratory