Non-Magnetic Fractionally Quantized Conductance in Quasi-One Dimensional Semiconductor Structures
ORAL
Abstract
For electrons in GaAs we find a rich structure, the dominant fractional values of conductance, consistently observed, are in the presence of a weak, asymmetric confinement. The values found are 2/5, 1/2 and 1/6. In the presence of a parallel magnetic field a number of other fractions started to appear, (2). These results will be discussed in relation to the formation of a zig-zag electron configuration with strong interactions between the two rows.
1.Y.Gul et al, J.Phys. Cond. Matt. 30, 09LT01, 2018
2. S. Kumar et al, to be published
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Presenters
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Michael Pepper
University College London
Authors
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Michael Pepper
University College London
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Sanjeev Kumar
University College London
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Yilmaz Gul
University College London
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Maksym Myronov
Physics, University of Warwick
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David A Ritchie
University of Cambridge, Department of Physics, University of Cambridge, Semiconductor Physics, University of Cambridge, Physics, University of Cambridge, Department of Physics, Cavendish Laboratory, Physics, Cambridge University
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Ian Farrer
University of Sheffield, Department of Physics, University of Cambridge, Electronic and Electrical Engineering, University of Sheffield, Electrical Engineering, University of Sheffield, Department of Electronic and Electrical Engineering, University of Sheffield, Physics, Sheffield University
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Henry Montagu
University College London