Measurements of out-of-plane magnetoresistance in ZrSiS, ZrSiSe, and HfSiS microstructures

Topological nodal-line semimetals with the general formula XSiY (X = Zr, Hf and Y = S, Se, Te) have recently attracted much experimental and theoretical interest due to their properties, particularly their large magnetoresistances and high carrier mobilities. Due to the platelet-like nature of the XSiY crystals and their extremely low residual resistivities, measurements of the resistivity along the [001] direction are extremely challenging. To accomplish such measurements, microstructures of single crystals were prepared using Focused Ion Beam techniques. Microstructures prepared in this manner have very well-defined geometries and maintain their high crystal quality, verified by the quantum oscillations we observed. We will present magnetoresistance and quantum oscillation data for currents applied along both [001] and [100] in ZrSiS, ZrSiSe, and HfSiS and discuss the role microstructuring can play in the study of these materials.