Band structure of topological insulators via cyclotron resonance

In the quasi-classical approximation the cyclotron mass can be directly connected to the band structure. The analysis based on the cyclotron resonance (CR) is especially useful for thin film materials in which capping layers prevent standard approaches like ARPES. Here, using the CR experiments in the terahertz range, we obtain the band structure of topological insulators (TI) based on mercury telluride (HgTe) quantum wells. In three-dimensional HgTe TI the dispersion of surface carriers is close to parabolic and it dominates the cyclotron signal. In addition, several other features are observed that can be attributed the bulk carriers. In two-dimensional HgTe TI the dispersion of electrons is close to linear showing increasingly complicated character in the region of the hole-like carriers.
[1] In cooperation with: A. Shuvaev, V. Dziom, J. Gospodaric, E. G. Novik, A. A. Dobretsova, N. N. Mikhailov, Z. D. Kvon