In-plane Selective Area InSb Networks for Scalable Majorana Devices

ORAL

Abstract

Theoretical proposals predict that networks of Indium Antimonide (InSb) nanowires are suitable for Majorana based quantum computing.

Here we show In-plane Selective Area Networks (InSANe) of InSb nanowires grown catalyst free with a high crystal quality. Although InSb has a large lattice mismatch with Indium Phosphide (InP) (high bandgap substrate material), we manage to synthesize single crystal networks. Transmission electron microscopy (TEM) analysis confirms a zincblende InSb nanowire with a single twin defect at the interface with the underlying substrate. Low temperature transport measurements (e.g. Aharonov-Bohm interference) demonstrate a large electron coherence length of up to 10 μm. An epitaxial superconductor on these networks induces a hard superconducting gap and gives rise to a 2e-periodic Coulomb blockade, making this platform very promising for Majorana topological quantum computing.

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Presenters

  • Roy Op het Veld

    Applied Physics, Eindhoven University of Technology, Eindhoven University of Technology, Applied Physics, Eindhoven Univ. of Technology

Authors

  • Roy Op het Veld

    Applied Physics, Eindhoven University of Technology, Eindhoven University of Technology, Applied Physics, Eindhoven Univ. of Technology

  • Di Xu

    Qutech, Delft University of Technology, QuTech and Kavli Institute of Nanoscience, Delft University of Technology

  • Marcel Verheijen

    Applied Physics, Eindhoven University of Technology

  • Mihir Pendharkar

    University of California - Santa Barbara, University of California Santa Barbara, Dept. of ECE, University of California Santa Barbara, Department of Electrical and Computer Engineering, University of California, Santa Barbara, Electrical and Computer Engineering, University of California, Santa Barbara, University of California Santa Barbara, Materials Engineering, University of California, Santa Barbara

  • Joon Sue Lee

    University of California - Santa Barbara, University of California Santa Barbara, Dept. of ECE, University of California Santa Barbara, California NanoSystems Institute, University of California, Santa Barbara, Department of Physics, The Pennsylvania State University, University of California, Santa Barbara

  • Stan Peters

    Applied Physics, Eindhoven University of Technology

  • Sebastian Koelling

    Applied Physics, Eindhoven University of Technology

  • Leo P Kouwenhoven

    Microsoft Station Q at Delft University of Technology, Microsoft Quantum Delft, Qutech, Delft University of Technology, QuTech, Delft University of Technology, Station Q Delft, Microsoft, Microsoft Station Q Delft, Microsoft Station-Q at Delft University of Technology, Microsoft Station Q Delft, Delft University of Technology

  • Chris Palmstrom

    University of California, Santa Barbara, University of California - Santa Barbara, University of California Santa Barbara, Electrical & Computer Engineering, University of California, Santa Barbara, ECE and Materials, University of California, Santa Barbara, Dept. of ECE, University of California Santa Barbara, Materials Department, University of California, Santa Barbara, Materials Engineering, University of California, Santa Barbara, University of California Santa Barbara, Materials Engineering, Departments of Electrical and Computer Engineering and Materials, University of California, Santa Barbara

  • Hao Zhang

    Tsinghua University, Beijing, China, Qutech, Delft University of Technology, QuTech and Kavli Institute of Nanoscience, Delft University of Technology

  • Erik P. A. M. Bakkers

    Applied Physics, Eindhoven University of Technology, Eindhoven University of Technology, Applied Physics, Eindhoven Univ. of Technology, Department of Applied Physics, Eindhoven University of Technology, TU Eindhoven, Eindhoven University of Technology, Department of Applied Physics, Physics, TU Eindhoven