Ab Initio Calculations of Bonding and Charge Transfer in Borophene Sheets on a Cu(111) Substrate

ORAL

Abstract

Borophene, the two-dimensional hexagonal lattice form of boron, is predicted to have technological uses in flexible electronics and as a precursor to metallic boron nanotubes. Boron’s electron deficiency leads to borophene sheets that have both hexagonal and triangular bonding, and different arrangements of these motifs lead to a wide range of nearly isoenergetic phases. Previous work has grown boron on Ag(111) substrates and reported the striped β12 and χ3 borophene phases, but more recent growth on a Cu(111) substrate by our team describes a more complex sheet structure with a much larger unit cell. We describe ab initio density functional theory simulations of borophene sheets on the Cu(111) surface to understand and explain this observed lattice structure. We discuss the bonding structure within the borophene sheet, paying special attention to electron doping via charge transfer from the Cu substrate. In addition, we compare our results to calculations of free-standing borophene sheets and discuss implications for practical growth of borophene on substrates.

R. Wu et al., “Large-area single-crystal sheets of borophene on Cu(111) surfaces”, Nature Nanotechnology 14, 44-49 (2019)

Presenters

  • Stephen Eltinge

    Department of Physics, Yale University, New Haven, CT 06520, USA

Authors

  • Stephen Eltinge

    Department of Physics, Yale University, New Haven, CT 06520, USA

  • Rongting Wu

    Yale University, Department of Applied Physics, Yale University, New Haven, CT 06520, USA

  • Ilya K. Drozdov

    Brookhaven National Laboratory, Upton, NY 11973, USA

  • Percy Zahl

    Brookhaven National Laboratory, Upton, NY 11973, USA

  • Ivan Bozovic

    Condensed Matter and Materials Science, Brookhaven National Laboratory, Condensed Matter Physics & Materials Science, Brookhaven National Lab, Brookhaven National Laboratory, Upton, NY 11973, USA, Brookhaven National Laboratory and Yale University

  • Adrian Gozar

    Applied Physics, Yale University, Department of Applied Physics, Yale University, New Haven, CT 06520, USA

  • Sohrab Ismail-Beigi

    Yale Univ, Applied Physics, Yale University, Department of Applied Physics, Yale University, New Haven, CT 06520, USA