Quantum Transport in N-doped 2D Tellurene

Tellurium (Te) is a p-type narrow-bandgap high-mobility semiconductor with one dimensional van der Waals (vdW) structure. It has a unique chiral-chain crystal lattice in which individual helical chains of Te atoms are stacked together by vdW type bonds and spiral around c-axis. With recently developed solvent-based growth method, we are able to probe the magneto-transport of Te in its 2D limit, coined as tellurene. In this work, we demonstrate an effective dielectric doping technique to realize n-type tellurene. We report on the pronounced weak anti-localization, quantum Hall effect, strong Shubnikov-de Haas oscillations on n-doped tellurene with temperature down to tens of mK and magnetic fields up to 31 Tesla. Angle, electron density and temperature dependence of the oscillations were systematically measured and analysized.