Electrical initialization of electron and nuclear spins in a single quantum dot at zero magnetic field

ORAL

Abstract

We demonstrate single quantum dot (p-type InGaAs quantum dot) electroluminescence (EL) with a circular polarization degree up to 35% at zero applied magnetic field, proving highly efficient electrical injection of spin polarized electrons [1]. It is achieved thanks to an ultrathin CoFeB electrode presenting Perpendicular Magnetic Anisotropy on top of a spin-LED. In addition, we measure an Overhauser shift of several micro-eV at zero magnetic field for the positively charged exciton (trion X+) EL emission, which changes sign as we reverse the injected electron spin orientation. This is a signature of dynamic polarization of the nuclear spins [1] in the quantum dot induced by the hyperfine interaction with the electrically injected electron spin. Both EL circular polarization and Overhauser shift follow the hysteresis cycle of the magnetic electrode. This study paves the way for electrical initialization of electron and nuclear spins in a single quantum dot without any external magnetic field. [1] F. Cadiz et al, Nano Letters 18 (4), 2381-2386 (2018)

Presenters

  • Pierre Renucci

    LPCNO, Institut National des Sciences Appliquees de Toulouse, INSA/CNRS

Authors

  • Pierre Renucci

    LPCNO, Institut National des Sciences Appliquees de Toulouse, INSA/CNRS

  • Fabian Cadiz

    Ecole Polytechnique

  • Adbelhak djeffal

    Institut Jean Lamour, UMR 7198,CNRS-Nancy Université

  • Delphine Lagarde

    CNRS/INSA, LPCNO, Institut National des Sciences Appliquees de Toulouse

  • Andrea Balocchi

    LPCNO, Institut National des Sciences Appliquees de Toulouse

  • Bingshan Tao

    Institut Jean Lamour, UMR 7198,CNRS-Nancy Université

  • Bo Xu

    Institute of Semiconductors Beijing

  • shiheng liang

    Institut Jean Lamour, UMR 7198,CNRS-Nancy Université

  • mathieu stoffel

    Institut Jean Lamour, UMR 7198,CNRS-Nancy Université

  • xavier devaux

    Institut Jean Lamour, UMR 7198,CNRS-Nancy Université

  • Henri Jaffres

    Unité Mixte de Physique CNRS-Thales

  • Jean-Marie George

    Unité Mixte de Physique CNRS-Thales

  • Michel Hehn

    Institut Jean Lamour, UMR 7198,CNRS-Nancy Université

  • Stephane Mangin

    University of Lorraine, Institut Jean Lamour, UMR 7198,CNRS-Nancy Université

  • Hélène Carrere

    LPCNO, Institut National des Sciences Appliquees de Toulouse

  • Xavier Marie

    CNRS/INSA, LPCNO, Institut National des Sciences Appliquees de Toulouse, LPCNO, Institut National des Sciences Appliquées de Toulouse, INSA/CNRS, INSA Toulouse

  • Thierry Amand

    LPCNO, Institut National des Sciences Appliquees de Toulouse, INSA/CNRS

  • Xiufeng Han

    Institute of Physics, Beijing

  • Zhanguo Wang

    Institute of Semiconductors Beijing

  • Bernhard Urbaszek

    CNRS/INSA, LPCNO, Institut National des Sciences Appliquees de Toulouse, INSA/CNRS, INSA Toulouse

  • Yuan Lu

    Institut Jean Lamour, UMR 7198,CNRS-Nancy Université