Effects of Wet Transfer on Photoluminescence of WS2
ORAL
Abstract
Chemical vapor deposition (CVD)-grown transition metal dichalcogenides (TMDs) are often required to be transferred onto another substrate for device applications. The KOH-based wet transfer is the most popular method to transfer TMDs. However, after transfer, PL intensity is heavily quenched due to a combination of trappd water, substrate dope and solvent effects which are introduced during transfer process.
Here, we evaluated the effects of solvents and polymers involved in the wet etching transfer on the PL property of WS2. We used CVD-grown WS2 sample and simulate the transfer process by applying each solvent and polymer to WS2 respectively. The PL mapping results showed there is no significant reduction of PL intensity of WS2 before and after acetone, IPA, DI water and PMMA treatment. We then studied the effect of KOH on the PL intensities by transferring WS2 onto PDMS substrate using the Cu-based transfer method [1]. After 30% KOH solution treatment, the sample showed significant reduction of PL intensity compared to it before KOH treatment. We attribute that KOH molecules are physically adsorbed onto WS2, which can be removed through acid neutralization or high vacuum annealing.
[1] Z. Lin, et. al., Scientific reports, 5, 18596 (2015).
Here, we evaluated the effects of solvents and polymers involved in the wet etching transfer on the PL property of WS2. We used CVD-grown WS2 sample and simulate the transfer process by applying each solvent and polymer to WS2 respectively. The PL mapping results showed there is no significant reduction of PL intensity of WS2 before and after acetone, IPA, DI water and PMMA treatment. We then studied the effect of KOH on the PL intensities by transferring WS2 onto PDMS substrate using the Cu-based transfer method [1]. After 30% KOH solution treatment, the sample showed significant reduction of PL intensity compared to it before KOH treatment. We attribute that KOH molecules are physically adsorbed onto WS2, which can be removed through acid neutralization or high vacuum annealing.
[1] Z. Lin, et. al., Scientific reports, 5, 18596 (2015).
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Presenters
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Siwei Chen
Stevens Institute of Technology, Mechanical Engineering, Stevens Institute of Technology
Authors
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Xiaotian Wang
Stevens Institute of Technology, Mechanical Engineering, Stevens Institute of Technology
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Kyungnam Kang
Stevens Institute of Technology, Mechanical Engineering, Stevens Institute of Technology
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Shichen Fu
Stevens Institute of Technology, Mechanical Engineering, Stevens Institute of Technology
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Kyle Godin
Stevens Institute of Technology
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Siwei Chen
Stevens Institute of Technology, Mechanical Engineering, Stevens Institute of Technology
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Eui-Hyeok Yang
Stevens Institute of Technology, Mechanical Engineering, Stevens Institute of Technology