Manipulation of electronic defects in hexagonal boron nitride

ORAL

Abstract

Hexagonal boron nitride (hBN) provides a regular nuclear spin lattice, which makes it a promising platform for studying models of spin dynamics. This material also hosts numerous electronic defects that have been well-characterized in bulk electron paramagnetic resonance (EPR) spectroscopy. Nitrogen vacancy (NV) centers in diamond are very sensitive local magnetic field probes that can polarize and control single electronic spins and nanoscale volumes of nuclear spins. In this experiment we use an NV center to manipulate electronic defects in and near hBN, and we are working towards utilizing these defects for better initialization and control of local nuclear spins.

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Presenters

  • Elana Urbach

    Harvard University, Physics, Harvard University

Authors

  • Elana Urbach

    Harvard University, Physics, Harvard University

  • Tamara Sumarac

    Harvard University

  • Helena Knowles

    Harvard University

  • Javier D Sanchez-Yamagishi

    University of California Irvine, Physics, University of California Irvine

  • Soonwon Choi

    University of California, Berkeley, UC Berkeley, Physics, University of California Berkeley, University of California Berkeley, Harvard University, Physics, University of California, Berkeley

  • Bo Dwyer

    Harvard University, Physics, Harvard University

  • Trond I Andersen

    Harvard University

  • Mikhail Lukin

    Harvard University, Physics, Harvard University