First-principle study of spin-strain coupling in defect spin qubits

ORAL

Abstract

Spin defects in semiconductors are promising platforms for quantum information processing and are useful components of hybrid quantum devices. Transition energies between different defect states are sensitive to external perturbations and hence lattice strains can be utilized for mechanical control of qubits. In this work, we use density functional theory to predict the coupling strength between spin and mechanical degrees of freedom for prototypical defect spin qubits including the nitrogen-vacancy centers in diamond and divacancies in silicon carbide, and we compare our results with recent experiments [1].

[1] Whiteley, S. J., Wolfowicz, G., Anderson, C. P., Bourassa, A., Ma, H., Ye, M., Koolstra, G., Satzinger, K. J., Holt, M. V., Heremans, F. J., Cleland, A. N., Schuster, D. I., Galli, G., Awschalom D. D. (2018) arXiv:1804.10996.

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Presenters

  • He Ma

    Institute for Molecular Engineering and Department of Chemistry, University of Chicago, Chemistry, University of Chicago, University of Chicago

Authors

  • He Ma

    Institute for Molecular Engineering and Department of Chemistry, University of Chicago, Chemistry, University of Chicago, University of Chicago

  • Meng Ye

    Institute for Molecular Engineering, University of Chicago

  • Samuel Whiteley

    University of Chicago, Institute for Molecular Engineering and Department of Physics, University of Chicago, Institute for Molecular Engineering, University of Chicago

  • Gary Wolfowicz

    University of Chicago, Institute for Molecular Engineering, University of Chicago

  • David Awschalom

    University of Chicago, Institute for Molecular Engineering, University of Chicago

  • Giulia Galli

    Institute for Molecular Engineering, University of Chicago, Institute for Molecular Engineering and Materials Science Division, University of Chicago and Argonne National Laboratory, University of Chicago, Argonne National Lab, Institute for Molecular Engineering and Department of Chemistry, University of Chicago, University of Chicago and Argonne National Laboratory, The Institute for Molecular Engineering, University of Chicago, University of Chicago, Institute for Molecular Engineering, Univ. of Chicago; Department of Chemistry, Univ. of Chicago; Materials Science Division, Argonne National Laboratory