Formation of helical domain walls in the fractional quantum Hall regime as a step toward realization of high-order non-Abelian excitations

It has been proposed that parafermion excitations can emerge in the fractional quantum Hall effect (FQHE) regime if two counter-propagating chiral edge states with fractionally charged excitations and opposite polarization are brought into close proximity in the presence of superconducting coupling.In this work we present formation of conducting channels at boundaries between incompressible polarized and unpolarized$\nu =2/3$states in FQHE regime.We demonstrate that in a triangular quantum well polarizations of a 2DEG can be locally controlled by electrostatic gating at a filling factor$\nu=2/3$.Conductance of channels formed at a boundary of polarized and unpolarized phases does not depend significantly on the magnetic field direction, indicating formation of helical domain walls.Such local control of polarization allows formation of a reconfigurable network of domain walls and can provide a platform for parafermion manipulation and braiding when superconductivity is proximity-induced into these domain walls.