ARPES microscopy of hBN flakes

ORAL

Abstract

Hexagonal boron nitride (hBN) is an essential component in van der Waals heterostructures. It provides high-quality and weakly interacting interfaces that preserve the electronic properties of adjacent materials. We will present the full valence-band (VB) electronic structure of micrometer-sized exfoliated flakes of hBN using angle-resolved photoemission spectroscopy with micrometer and nanometer spatial resolution. We identify the π - and σ -band dispersions, the hBN stacking order, and determine a total VB bandwidth of 19.4 eV. We compare these results with electronic structure data for epitaxial hBN on graphene on silicon carbide grown in situ using a borazine precursor. The epitaxial growth and electronic properties are investigated using photoemission electron microscopy. Our measurements show that the fundamental electronic properties of hBN are highly dependent on the fabrication strategy.

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Presenters

  • Roland Koch

    Advanced Light Source, Lawrence Berkeley National Laboratory, Lawrence Berkeley National Laboratory, Advanced Light Source, E. O. Lawrence Berkeley National Laboratory

Authors

  • Roland Koch

    Advanced Light Source, Lawrence Berkeley National Laboratory, Lawrence Berkeley National Laboratory, Advanced Light Source, E. O. Lawrence Berkeley National Laboratory

  • Jyoti Katoch

    Department of Physics, Carnegie Mellon University

  • Simon K Moser

    Advanced Light Source, Lawrence Berkeley National Laboratory, Lawrence Berkeley National Laboratory

  • Daniel Schwarz

    Advanced Light Source, Lawrence Berkeley National Laboratory

  • Roland Kawakami

    Ohio State University, Department of Physics, The Ohio State University, Physics, The Ohio State University, Department of Physics, Ohio State University

  • Aaron Bostwick

    Advanced Light Source, E.O. Lawrence Berkeley National Lab, Berkeley, CA 94720, USA, Advanced Light Source, Lawrence Berkeley National Laboratory, ALS, Lawrence National Berkeley Laboratory, Advanced Light Source, Lawrence Berkeley National Lab, Lawrence Berkeley National Laboratory, Advanced Light Source (ALS), E. O. Lawrence Berkeley National Laboratory, USA, Advanced Light Source, E. O. Lawrence Berkeley National Laboratory

  • Eli Rotenberg

    Advanced Light Source, E.O. Lawrence Berkeley National Lab, Berkeley, CA 94720, USA, Advanced Light Source, Lawrence Berkeley National Laboratory, ALS, Lawrence National Berkeley Laboratory, Advanced Light Source, Lawrence Berkeley National Lab, Lawrence Berkeley National Laboratory, Advanced Light Source (ALS), E. O. Lawrence Berkeley National Laboratory, USA, Advanced Light Source, E. O. Lawrence Berkeley National Laboratory

  • Chris Jozwiak

    Advanced Light Source, E.O. Lawrence Berkeley National Lab, Berkeley, CA 94720, USA, Advanced Light Source, Lawrence Berkeley National Laboratory, ALS, Lawrence National Berkeley Laboratory, Advanced Light Source, Lawrence Berkeley National Lab, Lawrence Berkeley National Laboratory, Lawrence Berkeley National Lab, Berkeley, USA, Advanced Light Source (ALS), E. O. Lawrence Berkeley National Laboratory, USA, Advanced Light Source, E. O. Lawrence Berkeley National Laboratory

  • Soren Ulstrup

    Department of Physics and Astronomy, Aarhus University, Physics and Astronomy, Aarhus University, Denmark