Angle-resolved photoemission spectroscopy on wet-transferred highly oriented MoS2 monolayers on HOPG substrates

ORAL

Abstract

The ability to create a large area of monolayer 2D electronic materials with the same orientation on different substrates will play a very critical role for scalable flatland electronics. It has been shown that highly-oriented monolayer (ML) MoS2 can be grown on a carefully prepared sapphire substrate with nearly full coverage and transferred to different substrates [1]. However, it is still unclear whether such a transfer process will introduce unwanted defects that will affect the electronic structure. Here, we report successful preparation of high quality ML MoS2 transferred to HOPG substrates by using a wet transfer method. With a proper treatment, we reveal detailed electronic band structure using high resolution angle-resolved photoemission spectroscopy. Due to the fact that these MoS2 monolayers are highly oriented and interaction with a substrate is very weak [2], we are able to resolve the electronic band structure clearly including K point band splitting.
[1] Yu, Hua, et al.ACS nano,2017,11(12) [2] Miwa, Jill A., et al. Phys. Rev. Lett. 114, 046802(2015)

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Presenters

  • Woojoo Lee

    Physics, University of Texas at Austin

Authors

  • Woojoo Lee

    Physics, University of Texas at Austin

  • Li-Shuan Lu

    Electrophysics, National Chiao Tung University, Department of Electrophysics, National Chiao Tung University, Department of Electrophysics, National Chiao Tung University, Hsinchu 30010, Taiwan, Department of Electrophysics, National Chiao Tung University, Taiwan

  • Wei-Chen Chueh

    Electrophysics, National Chiao Tung University

  • Wen-Hao Chang

    Electrophysics, National Chiao Tung University, Department of Electrophysics, National Chiao Tung University, Department of Electrophysics, National Chiao Tung University,, Department of Electrophysics, National Chiao Tung University, Hsinchu 30010, Taiwan, Department of Electrophysics, National Chiao Tung University, Taiwan

  • Chih-Kang Shih

    Department of Physics, The University of Texas at Austin, Austin, Texas, 78712, USA., University of Texas at Austin, Physics, University of Texas at Austin, Department of Physics, University of Texas at Austin, TX 78712, United States, Department of Physics, The University of Texas at Austin, Department of Physics, The University of Texas at Austin, USA