Full 300mm fin based QD device characterization

Intel’s efforts towards the fabrication of spin qubit devices have required a comprehensive device characterization, from transistors and quantum dots, to qubits, which have been co-fabricated in the same die/wafer. In this talk, we will present an in-depth device characterization, and the results from quantum dot devices manufactured in a full 300mm line. We will give details of the fin based process flow which yields high charging energy devices. The extraction of QD related figures of merit from room and low temperature testing (1.6K) are part of the method to rapidly screen 300mm wafers with thousands of devices which are used to determine the spin qubit devices that will be taken to the milli-kelvin measurements; keeping up with the pace of the 300mm fab output.