4H-SiC-on-Insulator Platform for Quantum Photonics with Color Centers

Defects in Silicon Carbide (SiC) are considered for quantum photonics applications because of their favorable spin coherence properties and optical emission wavelengths. To aid integration of these defects into nanophotonic structures, we develop a 4H-SiC-on-insulator platform based on bonding and thinning techniques. The process results in 4H-SiC films of pristine crystal quality with no radiative defects in the 800 - 1000 nm wavelength range. Color centers are readily introduced via irradiation. We demonstrate 4H-SiC ring resonators and photonic crystal cavities with Q ~ 10⁴