Design of Super-High-TChigh-entropy ferromagnetic semiconductors in Fe-doped III-V compound semiconductorsby spinodal nano-decomposition and volume compensated codoping

ORAL

Abstract

Based on the three general design rules of (1) the volume compensations [VC] by codoping, (2) spinodal nano-decomposition [SND], and (3) high-entropy ferromagnetic semiconductors [HEFS], we design the super-high-TC(TC> 1000K) HEFS in Fe-doped III-V compound semiconductors by computational nano-materials design. The substitutional(S) Fe impurity [Fe(S)] reduces the volume, whilethe interstitial (I = tetrahedral or octahedral site) Fe impurity [Fe(I)] expands the volume in III-V compound semiconductors, which is called volume compensation. The solubilitiesof the Fe(S) and Fe(I) are low due to the positive formation energy, so thatthe SND occurs due to the positive mixing energy. Based on the codoping of isoelectric Fe(S) and triple donors of Fe(I) more than 15~20%, we design the HEFS with super-high-TCbased on the strong ferromagnetic double exchange interactions in SND.

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Presenters

  • Hiroshi Katayama-Yoshida

    The University of Tokyo, CSRN, The University of Tokyo

Authors

  • Hikari Shinya

    Yokohama National University

  • Tetsuya Fukushima

    Osaka University, INSD, Osaka University, Institute of Scientific and Industrial Research, Osaka University, Japan, Institute for NanoScience Design, Osaka university

  • Akira Masago

    Osaka University, CSRN, Osaka University

  • Kazunori Sato

    Osaka University, Graduate School of Engineering, Osaka University

  • Hiroshi Katayama-Yoshida

    The University of Tokyo, CSRN, The University of Tokyo