Working principles of the short-period superlattice structure in GaAs quantum wells

ORAL

Abstract

We present the design rules of GaAs quantum wells that utilize the short-period superlattice (SPSL) structure to achieve a two dimensional electron system (2DES). By changing growth conditions such as doping density, barrier composition, and well width within the SPSL, we show that the density of the 2DES can be tuned from 2.0 x 1011 cm-2 to 4.5 x 1011 cm-2 even with a fixed spacer thickness. This implies we can prepare samples that have quite different 2DES density but rather similar scattering conditions. The magnetotransport is analyzed in detail and the influence of the change in 2DES density is discussed, with an emphasis on the strength of the fraction quantum Hall states.

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Presenters

  • Edwin Chung

    Princeton University

Authors

  • Edwin Chung

    Princeton University

  • K. W. Baldwin

    Electrical Engineering, Princeton University, Princeton University

  • Kenneth West

    Electrical Engineering, Princeton University, Princeton University, Princeton Univ, Department of Electrical Engineering, Princeton University, PRISM, Princeton University, Physics, University of Pittsburgh, Electrical Engineering, Princeton

  • Mansour Shayegan

    Princeton University

  • Loren Pfeiffer

    Electrical Engineering, Princeton University, Princeton University, Princeton Univ, Department of Electrical Engineering, Princeton University, PRISM, Princeton University, Physics, Princeton University, Electrical Engineering, Princeton