Finite-temperature charge dynamics and the melting of the Mott insulator

ORAL

Abstract

The Mott insulator is the quintessential strongly correlated electronic state. A full understanding of the coupled charge and spin dynamics of the Mott-insulating state is thought to be the key to a range of phenomena in ultracold atoms and condensed matter, including high-Tc superconductivity. Here we extend the slave-fermion (holon-doublon) description of the two-dimensional Mott insulator to finite temperatures. We benchmark its predictions against state-of-the-art quantum Monte Carlo simulations, finding quantitative agreement. Qualitatively, the short-ranged spin fluctuations at any finite temperatures are sufficient to induce holon-doublon bound states, and renormalize the charge sector to form the Hubbard bands. The Mott gap is understood as the charge (holon-doublon) gap renormalized downwards by these spin fluctuations. With increasing temperature, the Mott gap closes while the charge gap remains finite, causing a pseudogap regime to appear naturally during the process of melting the Mott insulator.

Presenters

  • Bruce Normand

    Paul Scherrer Institute, Switzerland, Paul Scherrer Institute, Neutrons and Muons Research Division, Paul Scherrer Institute, Paul Scherer Institute, Vilingen, Laboratory for Neutron Scattering and Imaging, Paul Scherrer Institute, CH-5232 Villigen PSI, Switzerland

Authors

  • Bruce Normand

    Paul Scherrer Institute, Switzerland, Paul Scherrer Institute, Neutrons and Muons Research Division, Paul Scherrer Institute, Paul Scherer Institute, Vilingen, Laboratory for Neutron Scattering and Imaging, Paul Scherrer Institute, CH-5232 Villigen PSI, Switzerland

  • Xing-Jie Han

    RWTH Aachen University, Aachen, Germany

  • Chuang Chen

    Chinese Academy of Sciences (CAS), China, Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Institute of Physics, Chinese Academy of Science

  • Jing Chen

    Chinese Academy of Sciences (CAS), China

  • Hai-Dong Xie

    Chinese Academy of Sciences (CAS), China

  • Rui-Zhen Huang

    Chinese Academy of Sciences (CAS), China

  • Hai-Jun Liao

    Chinese Academy of Sciences (CAS), China, Institute of Physics, Chinese Academy of Sciences, P.O. Box 603, Beijing 100190, China

  • Zi Yang Meng

    Institute of Physics, Chinese Academy of Sciences, Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Science, Institute of physics, Chinese Academy of Sciences, Chinese Academy of Science, Chinese Academy of Sciences, Chinese Academy of Sciences (CAS), China, Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Institute of Physics, CAS, Institute of Physics, Chinese Academy of Science

  • Tao Xiang

    Chinese Academy of Sciences (CAS), China, Institute of Physics, Institute of Physics, Chinese Academy of Sciences, Institute of Physics, CAS, Institute of Physics, Chinese Academy of Sciences, P.O. Box 603, Beijing 100190, China