Non-vanishing Fraunhofer Pattern in WTe2 Josephson Junction

ORAL

Abstract

WTe2 is predicted to host Weyl nodes at the contact of electron and hole pockets in a momentum space (Type-II Weyl semimetal) and exhibit novel transport properties. We fabricated proximity Josephson junctions based on mechanically exfoliated WTe2 layers of thickness around 10-20 nm and studied their Josephson effects under magnetic field. Josephson critical current modulation as a function of perpendicular magnetic field, Ic(B), (so-called Fraunhofer pattern) exhibited non-vanishing lobes up to ~300 Gauss when Josephson current direction is parallel to a-axis of WTe2 crystal. This indicates that Josephson current through a-axis of WTe2 layer has enhanced contribution from the edges of the flake. However, flowing Josephson current parallel to b-axis of WTe2 resulted in ordinary Fraunhofer pattern. We will discuss about observed anisotropic quantum transport of WTe2 Josephson junction in regard to its topological nature.

Presenters

  • Yong-Bin Choi

    Department of Physics, Pohang University of Science and Technology

Authors

  • Yong-Bin Choi

    Department of Physics, Pohang University of Science and Technology

  • Chui-Zhen Chen

    Department of Physics, Hong Kong University of Science and Technology

  • Jinho Park

    Department of Physics, Pohang University of Science and Technology

  • Gaurav Rana

    Max Plank Institute for Microstructure Physics

  • Hu-Jong Lee

    Department of Physics, Pohang University of Science and Technology

  • Mazhar Ali

    Max Planck Institute for Microstructure Physics, Max Plank Institute for Microstructure Physics, Max Planck Institute of Microstructure Physics

  • Kam Tuen Law

    Physics, Hong Kong University of Science and Technology, Department of Physics, Hong Kong University of Science and Technology, Physics, HKUST, Hong Kong University of Science and Technology, The Hong Kong University of Science and Technology

  • Kin Chung Fong

    BBN Technologies, Quantum Information Processing Group, Raytheon BBN Technologies

  • Gil-Ho Lee

    POSTECH, Department of Physics, Pohang University of Science and Technology