Band structure tuning of doped Graphene/hBN heterostructure

ORAL

Abstract

Tuning Dirac electrons by a periodic potential is an important scientific question and graphene/h-BN is a model van der Waals heterostructure for investigating this. Here we report our recent ARPES progress on the electronic band structure of doped graphene/BN, which shows intriguing band structure engineering of both the valence and conduction bands.

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Presenters

  • Hongyun Zhang

    Department of Physics, Tsinghua Univ, Tsinghua University

Authors

  • Hongyun Zhang

    Department of Physics, Tsinghua Univ, Tsinghua University

  • Eryin Wang

    Tsinghua University

  • Shuopei Wang

    Chinese Academy of Science

  • Xiaobo Lu

    Beijing National Laboratory for Condensed Matter Physics, Beijing, China, Chinese Academy of Science, Physics, Washington University in St. Louis

  • Jonathan Denlinger

    ALS, Lawrence Berkeley National Laboratory, Lawrence Berkeley National Laboratory, Lawrence Berkeley National Labotatory, Advanced Light Source, Lawrence Berkeley National Laboratory, Lawrence Berkeley Natl Lab

  • Alexei V Fedotov

    Lawrence Berkeley National Labotatory

  • Takashi Taniguchi

    National Institute for Materials Science, 1-1 Namiki, Tsukuba, Ibaraki 305 0044, Japan, National Institute for Materials Science, Advanced Materials Laboratory, National Institute for Materials Science, , 1-1 Namiki, Tsukuba 305-0044, Japan, National Institute for Material Science, 1-1 Namiki, Tsukuba 305-0044, National Institute of Materials Science, NIMS, Japan, Advanced Materials Laboratory, NIMS, National Institute for Materials Science, Tsukuba, Japan, Advanced Materials Laboratory, National Institute for Materials Science, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan, National Institute for Materials Science, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0044, Japan, National Institute for Materials Science (NIMS), NIMS Tsukuba, NIMS, National Institute for Material Science, National Institute for Materials Science, Japan, National Institute for Materials Science, 1-1 Namiki, Tsukuba, Japan, National Institute for Materials Science , Japan, Advanced Materials Laboratory, National Institute for Materials Science, Japan, Advanced Materials Laboratory, National Institute for Materials Science, Tsukuba, Ibaraki 305-0044, Japan, National Institute for Materials Science, Tsukuba, Ibaraki 305- 0044, Japan, National Institute for Material Science - Japan, National Institute for Materials Science, Namiki Tsukuba Ibaraki, Japan, National Institute of Material Science, Advanced Material Lab, NIMS, Advanced Materials Laboratory, National Institute for Materials Science, Tsukuba, Japan, Advanced Materials Laboratory, National Institute for Materials Science, Tsukuba, Ibaraki, Japan, National Institute for Materials Science, Tsukuba, 1-1 Namiki, Tsukuba, National Institute for Materials Science, NIMS/Tsukuba, National Institute for Materials Science, 1-1 Namiki, Tsukuba, 305-0044 Japan, National Institute for Materials Science, Namiki, 305-0044, Japan, National Institute for Material Science, Japan, Advanced Materials Laboratory, NIMS, Japan, Advanced Materials Labaratory, National Institute for Materials Science, National Institute of Material Science, 1-1 Namiki, Tsukuba, Ibaraki 205-0044, Japan, National Institute of Materials Science, Japan

  • Guangyu Zhang

    Beijing National Laboratory for Condensed Matter Physics, Beijing, China, Chinese Academy of Science

  • Shuyun Zhou

    Department of Physics, Tsinghua University, Department of Physics, Tsinghua Univ, Physics, Tsinghua University, Tsinghua University, Physics, Tsing Hua University