Magnetic Field Dependent Transport Measurements on High Quality InAs Nanowires

Semiconductor nanowires with strong spin-orbit interaction are attracting considerable interest as potential platform for spintronic and topological quantum computing applications. However, future progress will require scalability and integration concepts that go well beyond the single nanowire level.
We present the low temperature characterization of InAs nanowires grown via the template assisted selective epitaxy (TASE) technique [1]. The TASE approach allows for the deterministic growth of semiconducting nanowires, networks and branched geometries on a two-dimensional silicon platform. Furthermore, structures grow encapsulated in a silicon oxide shell which preserves them from undesirable doping and surface oxidation. The high quality of TASE grown InAs nanowires was recently demonstrated by the observation of ballistic electron transport over length scales approaching one micrometer [2, 3]. In this work we additionally show quantized conductance measurements in a magnetic field and transport spectroscopy of Coulomb island devices for characterization of Lande' g-factor and spin-orbit coupling strength.

[1]: Borg, M., et al. J. Appl. Phys. 117.14 (2015): 144303.
[2]: Gooth, J., et al. Nano Lett. 17.4 (2017): 2596-2602.
[3]: Gooth, J., et al. Appl. Phys. Lett. 110.8 (2017): 083105.