High-mobility InAs two dimensional electron systems on GaSb substrates

ORAL

Abstract

The two dimensional electron gas in InAs quantum wells grown on nearly lattice-matched GaSb substrates is an attractive stage for mesoscopic device physics. However, use of this system has remained difficult due to outstanding challenges. Here we report on heterostructure design optimization and device fabrication that satisfies three main criteria for mesoscopic device operation: electrical isolation from the semiconducting substrate, ability to fully deplete the charge carriers and control residual sidewall conduction with lithographic gates, and high mobility to ensure ballistic transport over mesoscopic length scales [1]. In addition, we discuss our current progress in realization of mesoscopic devices including quantum point contacts and quantum dots.

[1] C. Thomas, A. T. Hatke, A. Tuaz, R. Kallaher, T. Wu, T. Wang, R. E. Diaz, G. C. Gardner, M. A. Capano, and M. J. Manfra, Phys. Rev. Mat. 2, 104602 (2018).

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Presenters

  • Anthony Hatke

    Station Q Purdue and Department of Physics and Astronomy, Purdue University

Authors

  • Anthony Hatke

    Station Q Purdue and Department of Physics and Astronomy, Purdue University

  • Candice Thomas

    Microsoft Station Q Purdue, Birck Nanotechnology Center, Purdue University

  • Aymeric Tuaz

    Birck Nanotechnology Center, Purdue University

  • Ray Kallaher

    Microsoft, Microsoft Quantum at Station Q Purdue, Purdue University, West Lafayette, Indiana 47907, USA, Birck Nanotechnology Center, Purdue University, Microsoft Quantum at Station Q Purdue, Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana 47907, USA

  • Tialung Wu

    Station Q Purdue and Department of Physics and Astronomy, Purdue University

  • Tian Wang

    Department of Physics and Astronomy and Station Q Purdue, Purdue University, Department of Physics and Astronomy, Purdue University, Department of Physics and Astronomy, Purdue University, West Lafayette, Indiana 47907 USA, Microsoft Station Q Purdue, Birck Nanotechnology Center, Purdue University

  • Rosa Diaz

    Purdue University, Birck Nano Technology Center, Purdue University, Birck Nanotechnology Center, Purdue University

  • Geoffrey C. Gardner

    Microsoft, Microsoft Quantum at Station Q Purdue, Purdue University, Microsoft Quantum at Station Q Purdue, Purdue University, West Lafayette, Indiana 47907, USA, Microsoft Station Q Purdue, Birck Nanotechnology Center, Purdue University, Department of Physics and Astronomy, Purdue University, Microsoft Quantum at Station Q Purdue, Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana 47907, USA, Purdue University, Station Q Purdue

  • Mike Capano

    Birck Nanotechnology Center, Purdue University

  • Michael Manfra

    Purdue University, Microsoft, Department of Physics and Astronomy and Station Q Purdue, Purdue University, Department of Physics and Astronomy, Purdue University, Department of Physics and Astronomy, Purdue University, West Lafayette, Indiana 47907 USA, Microsoft Station Q Purdue, Physics and Astronomy, Purdue University, Department of Physics and Astronomy, School of Materials Engineering and School of Electrical and Computer Engineering, Purdue University, Station Q Purdue and Department of Physics and Astronomy, Purdue University, Dept. of Physics, Purdue University, Department of Physics and Astronomy and Station Q Purdue, Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana 47907, USA, Dept. of Physics and Astronomy, Purdue, Purdue University, Station Q Purdue, Department of Physics and Astronomy, Station Q Purdue, and Birck Nanotechnology Center, Purdue University