High quality Bi2Se3 thin films grown on Van der Waals substrate BiInSe3

ORAL

Abstract

We grew high quality BiInSe3 single crystals and developed an exquisite process to prepare these crystals as substrates. Well cleaved BiInSe3 single crystals with subsequent in-situ thermal treatment can obtain atomically flat surface, which is evidenced by the sharp streaky reflection high energy electron diffraction (RHEED) patterns. By optimizing the growth recipe, we successfully grew high quality Bi2Se3 thin films on BiInSe3 single crystal substrates. Owing to the weak Van der Waals bonding between the interlayers of BiInSe3 substrates, we can easily transfer the Bi2Se3 thin films grown on these substrates. The high quality surface morphology and electrical transport characteristics, together with the transferrable feature all prove that BiInSe3 could be a promising substrate for TI films growth. Our discovery could pave a new pathway for improving the sample quality of topological insulator thin films.

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Presenters

  • Xiong Yao

    Center for Quantum Materials Synthesis and Department of Physics and Astronomy, Rutgers, the State University of New Jersey

Authors

  • Xiong Yao

    Center for Quantum Materials Synthesis and Department of Physics and Astronomy, Rutgers, the State University of New Jersey

  • Rongwei Hu

    Rutgers Center for Emergent Materials and Department of Physics and Astronomy, Rutgers, the State University of New Jersey

  • Jisoo Moon

    Rutgers, the State University of New Jersey, Department of Physics and Astronomy, Rutgers, the State University of New Jersey, Physics and Astronomy, Rutgers, The State University of New Jersey, Rutgers University, Rutgers University, New Brunswick

  • Sang-Wook Cheong

    Rutgers University, Department of Physics and Astronomy, Rutgers University, Rutgers University, New Brunswick, Rutgers Center for Emergent Materials and Department of Physics & Astronomy, Rutgers University, Center for Quantum Materials Synthesis and Department of Physics and Astronomy, Rutgers, the State University of New Jersey, Department of Physics, Rutgers University, Rutgers Center for Emergent Materials and Department of Physics and Astronomy, Rutgers University, Piscataway, NJ, Department of Physics and Astronomy, Rutgers University, Piscataway, NJ 08854, USA, Physics, Rutgers University, Physics and Astronomy, Rutgers University, New Brunswick, Department of Physics and Astronomy, Rutgers University, New Jersey, Rutgers University, Physics and Astronomy, and Laboratory for Pohang Emergent Materials and Max Plank POSTECH Center for Complex Phase Materials, Pohang University of Science, RCEM, Department of Physics and Astronomy, Rutgers U., Rutgers Center for Emergent Materials and Department of Physics and Astronomy, Rutgers University, Department of Physics and Astronomy, 136 Frelinghuysen Road, Piscataway, New Jersey 08854, USA, Rutgers Center for Emergent Materials

  • Seongshik Oh

    Rutgers, the State University of New Jersey, Center for Quantum Materials Synthesis and Department of Physics and Astronomy, Rutgers, the State University of New Jersey, Physics and Astronomy, Rutgers, The State University of New Jersey, Physics, Rutgers University, Physics, Rutgers, The State University of New Jersey, Rutgers University, Rutgers University - New Brunswick