Prospects for creating complex oxide quantum electronic heterostructures via solid phase epitaxy: PrAlO3/SrTiO3 model system
ORAL
Abstract
The creation of PrAlO3 thin films via SPE has required developing new ALD procedures, understanding crystallization kinetics, and probing the microstructure and interface structures of the crystallized thin films. Nearly stoichiometric amorphous PrAlO3 thin films were grown via ALD at 300 °C using tris(isopropylcyclopentadienyl)praseodymium, AlMe3, and water with a growth rate of 2.0 Å/cycle on TiO2-terminated STO (001) substrates. The as-deposited amorphous PrAlO3 crystallized via SPE to form an epitaxial layer on STO upon annealing at 800 °C for 3h. Our work provides new opportunities to form polar/nonpolar oxide interfaces, and the accompanying 2DEG in novel geometries.
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Presenters
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Yajin Chen
Department of Materials Science and Engineering, University of Wisconsin-Madison, Madison, WI 53706, USA
Authors
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Yajin Chen
Department of Materials Science and Engineering, University of Wisconsin-Madison, Madison, WI 53706, USA
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Wathsala Waduge
Department of Chemistry, Wayne State University, Detroit, MI 48202, USA
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Peng Zuo
Department of Materials Science and Engineering, University of Wisconsin-Madison, Madison, WI 53706, USA
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Thomas F. Kuech
Department of of Chemical and Biological Engineering, University of Wisconsin-Madison, Madison, WI 53706, USA
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Sue E. Babcock
Department of Materials Science and Engineering, University of Wisconsin-Madison, Madison, WI 53706, USA
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Chuck H. Winter
Department of Chemistry, Wayne State University, Detroit, MI 48202, USA
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Paul G Evans
Department of Materials Science and Engineering, University of Wisconsin-Madison, Madison, WI 53706, USA, Department of Materials Science & Engineering, University of Wisconsin - Madison, Madison, Wisconsin 53706, USA