Lattice-matched In0.17Al0.83N/GaN heterostructures for near-infrared intersubband absorption

ORAL

Abstract

Lattice-matched In0.17Al0.83N/GaN heterostructures are promising platforms for near-infrared optoelectronic devices based on intersubband transitions. Previously, strong near-infrared intersubband absorption (ISBA) was demonstrated in InAlN/GaN superlattices. But, reducing compositional inhomogeneity of InAlN barriers and effective doping of these heterostructures that affect ISBA properties presented open challenges. Here, we demonstrate that InAlN/GaN structures with saturated indium composition of 0.17 can be grown by plasma-assisted molecular beam epitaxy over a wide range of growth conditions and constructed the growth diagram for lattice-matched InAlN layers. Our results indicate that the studied growth conditions alone are not sufficient to eliminate the indium segregation and additional mechanisms are involved. The impact of an indium adlayer and a thin AlN nucleation layer on compositional inhomogeneity of InAlN barriers is discussed. We report the impact of different Si doping profiles and doping levels on structural quality and hence ISBA properties of lattice-matched InAlN/GaN superlattices.

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Presenters

  • Alexander Senichev

    Purdue University, Birck Nano Technology Center, Purdue University

Authors

  • Alexander Senichev

    Purdue University, Birck Nano Technology Center, Purdue University

  • Trang Nguyen

    Purdue University, Physics and Astronomy, Purdue University

  • Rosa Diaz

    Purdue University, Birck Nano Technology Center, Purdue University, Birck Nanotechnology Center, Purdue University

  • Brandon Dzuba

    Purdue University, Physics and Astronomy, Purdue University

  • MohammadAli Shirazi-Hosseini-Dokht

    Purdue University, Physics and Astronomy, Purdue University

  • Yang Cao

    Purdue University, Physics and Astronomy, Purdue University

  • Michael Manfra

    Purdue University, Microsoft, Department of Physics and Astronomy and Station Q Purdue, Purdue University, Department of Physics and Astronomy, Purdue University, Department of Physics and Astronomy, Purdue University, West Lafayette, Indiana 47907 USA, Microsoft Station Q Purdue, Physics and Astronomy, Purdue University, Department of Physics and Astronomy, School of Materials Engineering and School of Electrical and Computer Engineering, Purdue University, Station Q Purdue and Department of Physics and Astronomy, Purdue University, Dept. of Physics, Purdue University, Department of Physics and Astronomy and Station Q Purdue, Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana 47907, USA, Dept. of Physics and Astronomy, Purdue, Purdue University, Station Q Purdue, Department of Physics and Astronomy, Station Q Purdue, and Birck Nanotechnology Center, Purdue University

  • Oana Malis

    Purdue University, Physics and Astronomy, Purdue University