White-light Emitted InGaN Nanorods Grown on Pyramided Si Substrate

In this study, white-light emitted InGaN nanorods were grown on pyramided Si substrate by plasma-assisted molecular beam epitaxy system (PA-MBE) with fixed In/Ga flux ratio. Due to the textured morphology of pyramided Si substrate, using energy-dispersive X-ray spectroscopy (EDS), we demonstrate that the impingement flux ratios of Ga/In and N-plasma varied with different facets of Si pyramids, which results in different light emission ranges on different facets and mixed into white light emission. By conducting spatial resolved catholuminescence spectroscopy (CL), we have resolved that each facet emits different CL spectrum. This finding could assist the design of nanorods-embedded light emitted devices that can be grown more efficient and compact in structure.