Carrier Lifetime Analysis in a Transistor Laser by Using Non-Equilibrium Green’s Function Method with Effective Bond-Orbital Model

Carrier injection and recombination in a single quantum well AlGaAs/InGaP/GaAs/InGaAs transistor laser (TL) is examined theoretically with the non-equilibrium Green’s function (NEGF) method. The multi-band effects are incorporated in the NEGF method by applying effective bond-orbital model (EBOM). Carrier-phonon scattering are taken into account within the deformation-potential approximation. The squared momentum matrix elements, scattering rate, and the density of states for the quantum well in a TL are presented. In addition, the simulated I-V characteristics as well as the frequency response of the TL is shown and compared with the experimental data. In the end, the carrier recombination in the quantum well as well as the base region are discussed based on the results calculated by the present model.