Electrical and Magneto Transport Properties in Weyl Semimetal MoTe2

Molybdenum ditelluride MoTe2, a type II Weyl semimetal, has attracted intense interest due to novel properties such as large magnetoresistance, quantum spin Hall effect and massless carriers. Here we report on electrical and magneto transport studies of exfoliated multilayer MoTe2. Weak antilocalization is observed at low magnetic fields due to strong spin-orbit coupling. We also investigate layer dependent magnetoresistance at various temperatures. A back-gate voltage is applied to change the carrier density and Fermi level. It is shown such electronic properties can be effectively tuned by gate voltage.