2D Materials (Semiconductors) -- Emerging Materials I

FOCUS · S15

Presentations

  • An Orbitally-Derived Single Atom Magnetic Memory

    ORAL

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    Presenters

    • Brian Kiraly

      Scanning Probe Microscopy, Radboud University

    Authors

    • Brian Kiraly

      Scanning Probe Microscopy, Radboud University

    • Alexander N. Rudenko

      School of Physics and Technology, Wuhan University, Radboud University

    • Werner M. J. van Weerdendurg

      Scanning Probe Microscopy, Radboud University

    • Daniel Wegner

      Scanning Probe Microscopy, Radboud University

    • Mikhail Katsnelson

      Theory of Condensed Matter, Radboud University, Institute for Molecules and Materials,, Radboud University, Radboud University

    • Alexander A. Khajetoorians

      High Field Magnet Laboratory (HFML-EMFL), Radboud University, Scanning Probe Microscopy, Radboud University

    View abstract →

  • Anisotropic Quantum Transport in Black Phosphorus Two-dimensional Hole Gas

    ORAL

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    Presenters

    • Shuaifei Guo

      Fudan University

    Authors

    • Fangyuan Yang

      University of California, Santa Barbara, Fudan University

    • Zuocheng Zhang

      Fudan University

    • Nai Zhou Wang

      University of Science and Technology of China

    • Shuaifei Guo

      Fudan University

    • hao wang

      Southern University of Science and Technology

    • Kenji Watanabe

      National Institute for Materials Science, 1-1 Namiki, Tsukuba, Ibaraki 305 0044, Japan, Advanced Materials Laboratory, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan, National Institute for Materials Science, Advanced Materials Laboratory, National Institute for Materials Science, , 1-1 Namiki, Tsukuba 305-0044, Japan, National Institute for Material Science, 1-1 Namiki, Tsukuba 305-0044, National Institute of Materials Science, NIMS, Japan, Advanced Materials Laboratory, NIMS, National Institute for Materials Science, Tsukuba, Japan, National Institute for Materials Science, Japan, Advanced Materials Laboratory, National Institute for Materials Science, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan, National Institute for Materials Science, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0044, Japan, National Institute for Materials Science (NIMS), NIMS Tsukuba, National Institute for Materials Science (Japan), NIMS, National Institute for Material Science, National Institute for Materials Science, 1-1 Namiki, Tsukuba, Japan, National Institute for Materials Science , Japan, National Institute for Materials Science, Namiki 1-1, Tsukuba, Ibaraki 305-0044, Japan., Advanced Materials Laboratory, National Institute for Materials Science, Japan, Advanced Materials Laboratory, National Institute for Materials Science, Tsukuba, Ibaraki 305-0044, Japan, National Institute for Materials Science, Tsukuba, Ibaraki 305- 0044, Japan, National Institute for Material Science - Japan, National Institute for Materials Science, Namiki Tsukuba Ibaraki, Japan, National Institute of Material Science, Advanced Material Lab, NIMS, Advanced Materials Laboratory, National Institute for Materials Science, Tsukuba, Japan, Advanced Materials Laboratory, National Institute for Materials Science, Tsukuba, Ibaraki, Japan, National Institute for Materials Science, Tsukuba, 1-1 Namiki, Tsukuba, National Institute for Materials Science, NIMS/Tsukuba, National Institute for Materials Science, 1-1 Namiki, Tsukuba, 305-0044 Japan, National Institute for Materials Science, Namiki, 305-0044, Japan, National Institute for Material Science, Japan, Advanced Materials Laboratory, NIMS, Japan, Columbia University, Advanced Materials Labaratory, National Institute for Materials Science, National Institute of Material Science, 1-1 Namiki, Tsukuba, Ibaraki 205-0044, Japan, National Institute of Materials Science, Japan

    • Takashi Taniguchi

      Advanced Materials Laboratory, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan, National Institute for Materials Science, Japan, National Institute for Materials Science (Japan), National Institute for Materials Science, NIMS, Kyoto University, National Institute for Materials Science, Namiki 1-1, Tsukuba, Ibaraki 305-0044, Japan., National Institute of Materials Science

    • Xin Wan

      Zhejiang University

    • Xianhui Chen

      University of Science and Technology of China, Department of physics, University of Science and Technology of China

    • Yuanbo Zhang

      Fudan University, State Key Laboratory of Surface Physics and Department of Physics, Fudan University, Institute for Nanoelectronic Devices and Quantum Computing, Fudan University, Shanghai 200433, China, Dept. of Physics, Fudan University, Physics Department, Fudan University

    View abstract →

  • "Resonant Tunneling in Black Phosphorus Homojunction"

    ORAL

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    Presenters

    • Yasir Hassan

      SAINT, Sungkyunkwan University Suwon Korea

    Authors

    • Yasir Hassan

      SAINT, Sungkyunkwan University Suwon Korea

    • Pawan kumar Srivastava

      School of Mechanical Engineering, Sungkyunkwan University Suwon Korea

    • Budhi Singh

      Inter University Accelerator Center, new delhi, india

    • Changuu Lee

      School of Mechanical Engineering, Sungkyunkwan University Suwon Korea

    View abstract →

  • Strain Tuning of the Electronic Structures of Few-Layer Black Phosphorus

    ORAL

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    Presenters

    • Shenyang Huang

      Fudan University

    Authors

    • Shenyang Huang

      Fudan University

    • Guowei Zhang

      Fudan University

    • Feng-Ren Fan

      Fudan University

    • Fanjie Wang

      Fudan University

    • Qiaoxia Xing

      Fudan University

    • Chong Wang

      Fudan University, International Center for Quantum Materials, Peking University

    • Hua Wu

      Fudan University

    • Hugen Yan

      Fudan University

    View abstract →

  • Prolonged photo-carriers generated in Black Phosphorus

    ORAL

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    Presenters

    • Munisa Nurmamat

      Department of Physics Science, Graduate School of Science, Hiroshima University, Japan, Graduate School of Science, Hiroshima University, Japan

    Authors

    • Munisa Nurmamat

      Department of Physics Science, Graduate School of Science, Hiroshima University, Japan, Graduate School of Science, Hiroshima University, Japan

    • Yukiaki Ishida

      Institute for Solid State Physics, the University of Tokyo, Japan

    • Ryohei Yori

      Department of Physics Science, Graduate School of Science, Hiroshima University, Japan

    • Kazuki Sumida

      Department of Physics Science, Graduate School of Science, Hiroshima University, Japan, Graduate School of Science, Hiroshima University, Japan

    • Siyuan Zhu

      Department of Physics Science, Graduate School of Science, Hiroshima University, Japan

    • Masashi Nakatake

      Aichi Synchrotron Radiation Center, Aichi Science & Technology Foundation, Japan

    • Yoshifumi Ueda

      Hiroshima Synchrotron Radiation Center, Hiroshima University, Japan

    • Masaki Taniguchi

      Hiroshima Synchrotron Radiation Center, Hiroshima University, Japan

    • Shik Shin

      Institute for Solid State Physics, the University of Tokyo, Japan, Institute for Solid State Physics, University of Tokyo, Institute for Solid State Physics, The University of Tokyo

    • Yuichi Akahama

      Graduate School of Material Science, University of Hyogo, Japan

    • Akio Kimura

      Department of Physics Science, Graduate School of Science, Hiroshima University, Japan, Graduate School of Science, Hiroshima University, Japan

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  • Strain-engineered p-type to n-type transition in mono-, bi- and tri-layer phosphorene

    ORAL

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    Presenters

    • Anass Sibari

      Physics, Mohammed V University - Rabat

    Authors

    • Anass Sibari

      Physics, Mohammed V University - Rabat

    • Zineb Kerrami

      Physics, Mohammed V University - Rabat, Physics, Mohammed V University

    • Abdelkader Kara

      University of Central Florida, Physics, University of Central Florida

    • Omar Mounkachi

      Physics, Mohammed V University - Rabat

    • Mohammed Hamedoun

      MAScIR Foundation

    • Abdelilah Benyoussef

      MAScIR Foundation

    • Mohammed Benaissa

      Physics, Mohammed V University - Rabat, Physics Department, Mohammed V University -Rabat

    View abstract →

  • Probing topology through optical response in group V monolayers

    ORAL

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    Presenters

    • Gaofeng Xu

      University at Buffalo, The State University of New York

    Authors

    • Gaofeng Xu

      University at Buffalo, The State University of New York

    • Tong Zhou

      Department of Physics, University at Buffalo, University at Buffalo, The State University of New York, Department of Physics, State University of New York at Buffalo

    • Benedikt Scharf

      Wuerzburg University, University of Würzburg, Physics, university of Wuerzburg

    • Igor Zutic

      University at Buffalo, The State University of New York, Department of Physics, State University of New York at Buffalo, Department of Physics, University at Buffalo, Physics, State Univ of NY - Buffalo, Physics, University at Buffalo, The State University of New York, Physics, State University of New York at Buffalo

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  • Multiple Hall Effects in Functionalized Bismuth Monolayers

    ORAL

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    Presenters

    • Tong Zhou

      Department of Physics, University at Buffalo, University at Buffalo, The State University of New York, Department of Physics, State University of New York at Buffalo

    Authors

    • Tong Zhou

      Department of Physics, University at Buffalo, University at Buffalo, The State University of New York, Department of Physics, State University of New York at Buffalo

    • Jiayong Zhang

      School of Mathematics and Physics, Suzhou University of Science and Technology

    • Hua Jiang

      Soochow University, School of Physical Science and Technology, Soochow University, College of Physics, Optoelectronics and Energy, Soochow University, Suzhou, China

    • Igor Zutic

      University at Buffalo, The State University of New York, Department of Physics, State University of New York at Buffalo, Department of Physics, University at Buffalo, Physics, State Univ of NY - Buffalo, Physics, University at Buffalo, The State University of New York, Physics, State University of New York at Buffalo

    • Zhongqin Yang

      Department of Physics, Fudan University

    View abstract →

  • Electronic structures and unusually robust bandgap in an ultrahigh-mobility layered oxide semiconductor, Bi<sub>2</sub>O<sub>2</sub>Se

    ORAL

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    Presenters

    • Cheng Chen

      shanghaiTech University

    Authors

    • Cheng Chen

      shanghaiTech University

    • Meixiao Wang

      shanghaiTech University

    • Jinxiong Wu

      peking university

    • Huixia Fu

      Weizmann Institute of Science

    • Haifeng Yang

      shanghaiTech University, School of Physical Science and Technology, ShanghaiTech University, People's Republic of China

    • Zhen Tian

      shanghaiTech University

    • Teng Tu

      peking university

    • Han Peng

      University of Oxford, Department of Engineering, University of Oxford

    • Yan Sun

      Max Planck Institute for Chemical Physics of Solids, Max Planck Institute

    • Xiang Xu

      tsinghua university

    • Juan Jiang

      shanghaiTech University, Yale Univ, Applied Physics, Yale University, School of Engineering & Applied Science, Yale University, USA

    • Niels Schröter

      University of Oxford, Swiss Light Source, Paul Scherrer Institut, Paul Scherrer Institute, Paul Scherrer Institut, Swiss Light Source

    • Yiwei Li

      University of Oxford, Department of Physics, University of Oxford, United Kingdom, Department of Physics, University of Oxford

    • Ding Pei

      University of Oxford

    • Shuai Liu

      shanghaiTech University

    • Sandy Adhitia Ekahana

      University of Oxford, Department of Physics, University of Oxford

    • Hongtao Yuan

      Nanjing University

    • Jiamin Xue

      shanghaiTech University, ShanghaiTech University

    • Gang Li

      shanghaiTech University, School of Physical Science and Technology, ShanghaiTech University

    • Jinfeng Jia

      shanghai jiao tong university, Shanghai Jiao Tong University, Department of Physics and Astronomy, Shanghai Jiao Tong University

    • zhongkai liu

      shanghaiTech University, School of Physical Science and Technology, ShanghaiTech University, People's Republic of China, School of Physical Science and Technology, ShanghaiTech University

    • Binghai Yan

      Weizmann Institute of Science

    • hailin peng

      peking university

    • Yulin Chen

      University of Oxford, Department of Physics, University of Oxford, United Kingdom, Department of Physics, University of Oxford

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  • Chlorine termination of Silicene on Silver (111)

    ORAL

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    Presenters

    • Jennifer DeMell

      Laboratory for Physical Sciences

    Authors

    • Jennifer DeMell

      Laboratory for Physical Sciences

    • Michael Dreyer

      Laboratory for Physical Sciences, University of Maryland, College Park

    • Robert E Butera

      Laboratory for Physical Sciences

    View abstract →